Semiconductor device

ABSTRACT

A semiconductor device includes a cell semiconductor pattern disposed on a semiconductor substrate. A semiconductor dummy pattern is disposed on the semiconductor substrate, The semiconductor dummy pattern is co-planar with the cell semiconductor pattern. A first circuit is disposed between the semiconductor substrate and the cell semiconductor pattern. A first interconnection structure is disposed between the semiconductor substrate and the cell semiconductor pattern. A first dummy structure is disposed between the semiconductor substrate and the cell semiconductor pattern. Part of the first dummy structure is co-planar with part of the first interconnection structure. A second dummy structure not overlapping the cell semiconductor pattern is disposed on the semiconductor substrate. Part of the second dummy structure is co-planar with part of the first interconnection structure. A conductive shielding pattern is disposed between the cell semiconductor pattern and the semiconductor substrate and above the first circuit and the first interconnection structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.17/060,179 filed on Oct. 1, 2020, which is a continuation of U.S.application Ser. No. 16/151,526 filed on Oct. 4, 2018, now U.S. Pat. No.10,796,991 issued on Oct. 6, 2020, which is a continuation of U.S.application Ser. No. 14/957,113, filed on Dec. 2, 2015, now U.S. Pat.No. 10,115,667 issued on Oct. 30, 2018, which claims priority under 35U.S.C. § 119 to Korean Patent Application No. 10-2014-0172283, filed onDec. 3, 2014, the Korean Intellectual Property Office, the disclosuresof which are incorporated by reference herein in their entireties.

TECHNICAL FIELD

Exemplary embodiments of the inventive concept relate to a semiconductordevice, a method of fabricating the semiconductor device, and anelectronic system employing the semiconductor device and the method.

DESCRIPTION OF RELATED ART

In semiconductor devices such as a flash memory, a degree of integrationmay be an important factor in determining price. For example,two-dimensional semiconductor devices including two-dimensionallyarranged memory cells may require very expensive equipment to obtaintine-sized patterns which increase the degree of integration.Accordingly, there is a limit to increasing the degree of integration ofthe two-dimensional semiconductor devices. Three-dimensionalsemiconductor devices including three-dimensionally arranged memorycells may have a higher degree of integration than the two-dimensionalsemiconductor devices. However, process failures and device defects mayoccur as pattern sizes of the three-dimensional semiconductor devicesdecrease.

SUMMARY

in accordance with an exemplary embodiment of the inventive concept, asemiconductor device is provided. The semiconductor device includes acell semiconductor pattern disposed on a semiconductor substrate. Asemiconductor dummy pattern is disposed on the semiconductor substrate.The semiconductor dummy pattern is co-planar with the cell semiconductorpattern. A first circuit is disposed between the semiconductor substrateand the cell semiconductor pattern. A first interconnection structure isdisposed between the semiconductor substrate and the cell semiconductorpattern. The first interconnection structure is electrically connectedto the first circuit and extends away from the cell semiconductorpattern, A first dummy structure is disposed between the semiconductorsubstrate and the cell semiconductor pattern. A portion of the firstdummy structure is co-planar with a portion of the first interconnectionstructure. A second dummy structure not overlapping the cellsemiconductor pattern is disposed on the semiconductor substrate. Aportion of the second dummy structure is co-planar with a portion of thefirst interconnection structure. A cell array region is disposed on thecell semiconductor pattern. A conductive shielding pattern is disposedbetween the cell semiconductor pattern and the semiconductor substrate.The conductive shielding pattern is disposed above the first circuit andthe first interconnection structure.

The cell semiconductor pattern and the semiconductor dummy patterninclude silicon.

The semiconductor dummy pattern has a smaller size than the cellsemiconductor pattern.

The semiconductor dummy pattern is electrically isolated.

The first dummy structure includes a first dummy pattern and a seconddummy pattern disposed on the first dummy pattern.

In accordance with an exemplary embodiment of the inventive concept, asemiconductor device is provided. The semiconductor device includes acell semiconductor pattern disposed on a semiconductor substrate. Afirst circuit is disposed between the semiconductor substrate and thecell semiconductor pattern. A cell array region is disposed on the cellsemiconductor pattern. A first interconnection structure is disposedbetween semiconductor substrate and the cell semiconductor pattern. Thefirst interconnection structure is electrically connected to the firstcircuit. The first interconnection structure includes a plurality offirst interconnections extending away from the cell semiconductorpattern. The first interconnections have an interconnection density thatdecreases moving away from the cell semiconductor pattern. A first dummystructure is disposed between the semiconductor substrate and the cellsemiconductor pattern. The first dummy structure includes first dummypatterns co-planar with the first interconnections.

The first dummy structure is electrically isolated.

The first dummy pattern includes the same material and has substantiallythe same thickness as the first interconnections.

The semiconductor further includes second dummy patterns disposed on thesemiconductor substrate, wherein the second dummy patterns are co-planarwith the first interconnections.

The second dummy patterns do not overlap the cell semiconductor pattern.

The second dummy patterns have a lower pattern density at an area closerto the cell semiconductor pattern than at an area farther away from thecell semiconductor pattern.

The second dummy patterns face end portions of the firstinterconnections.

The second dummy patterns are spaced apart from the firstinterconnections.

In accordance with an exemplary embodiment of the inventive concept, asemiconductor device is provided. The semiconductor device includes afirst cell semiconductor pattern and a second cell semiconductor patterndisposed on the semiconductor substrate and having substantially thesarin thickness. First and second circuits are disposed between thesemiconductor substrate and the first cell semiconductor pattern. Thirdand fourth circuits are disposed between the semiconductor substrate andthe second cell semiconductor pattern. A first cell array region isdisposed on the first cell semiconductor pattern, and a second cellarray region is disposed on the second cell semiconductor pattern, Firstand second interconnection structures are disposed between thesemiconductor substrate and the first cell semiconductor pattern. Thefirst interconnection structure is electrically connected to the firstcircuit. The second interconnection structure is electrically connectedto the second circuit. Third and fourth interconnection structures aredisposed between the semiconductor substrate and the second cellsemiconductor pattern, The third interconnection structure iselectrically connected to the third circuit. The fourth interconnectionstructure is electrically connected to the fourth circuit. A dummystructure is disposed between the first cell semiconductor pattern andthe second cell semiconductor pattern.

The dummy structure includes a semiconductor dummy pattern disposed onthe semiconductor substrate between the first and second cellsemiconductor patterns and having substantially the same thickness asthe first and second cell semiconductor patterns, the first and secondcell semiconductor patterns have substantially the same size, and thesemiconductor dummy pattern has a smaller size than the first and secondsemiconductor patterns.

The first interconnection structure is disposed between the first cellsemiconductor pattern and the semiconductor substrate, extends awayfrosh the first cell semiconductor pattern toward the second cellsemiconductor pattern, and has a lower interconnection density at anarea farther away from the first cell semiconductor pattern than at anarea closer to the first cell semiconductor pattern, and the thirdinterconnection structure is disposed between the second cellsemiconductor pattern and the semiconductor substrate, extends away fromthe second cell semiconductor pattern to yard the first cellsemiconductor pattern, and has a lower interconnection density at anarea farther away from the second cell semiconductor pattern than at anarea closer to the second cell semiconductor pattern.

The first and third interconnection structures include the samematerial, have substantially the same thickness and are disposed in thesame plane.

A second dummy structure includes second interconnection dummy patternsdisposed between the first and third interconnection structures, and thesecond interconnection dummy patterns include substantially the samematerial and have the same thickness as interconnections of the firstand third interconnection structures and are disposed in the same planeas the interconnections of the first and third interconnectionstructures.

The second interconnection dummy patterns are spaced apart from thefirst and third interconnection structures and have a lower patterndensity at an area closer to the first and second cell semiconductorpatterns than at an area farther away from the first and second cellsemiconductor patterns.

The semiconductor device further includes: a first conductive shieldingpattern disposed between the first cell semiconductor pattern and thesemiconductor substrate, and above the first and second circuits and thefirst and second interconnection structures; and a second conductiveshielding pattern disposed between the second cell semiconductor patternand the semiconductor substrate, and above the third and fourth circuitsand the third and fourth interconnection structures.

In accordance with an exemplary embodiment of the inventive concept, asemiconductor device is provided. The semiconductor device includes acell semiconductor pattern disposed on the semiconductor substrate. Afirst circuit is disposed between the semiconductor substrate and thecell semiconductor pattern. A cell may region and a staircase region aredisposed on the cell semiconductor pattern. Cell gate conductivepatterns are disposed on the cell semiconductor pattern. The cell gateconductive patterns cross the cell array region and extend into thestaircase region. Cell vertical structures passing through the cell gateconductive patterns are disposed on the cell semiconductor pattern. Aconductive shielding pattern is disposed between the semiconductorsubstrate and the cell semiconductor pattern. The conductive shieldingpattern is disposed above the first circuit.

The conductive shielding pattern has a greater size than the cell arrayregion.

The conductive shielding pattern is a plate type.

The conductive shielding pattern overlaps the cell array region and thestaircase region.

The semiconductor device further includes: a ground interconnectiondisposed on the semiconductor substrate; and a ground contact structureconnecting the ground interconnection to the conductive shieldingpattern.

In accordance with an exemplary embodiment of the inventive concept, asemiconductor device is provided. The semiconductor device includes: acell semiconductor pattern disposed on a substrate; a transistordisposed between the substrate and the cell semiconductor pattern; afirst interconnection disposed between the transistor and the cellsemiconductor pattern; and a second interconnection disposed in the sameplane as the first interconnection, the second interconnection not beingoverlapped by the cell semiconductor pattern, wherein the firstinterconnection includes a plurality of interconnections extending awayfrom the cell semiconductor pattern, the number of interconnectionsdecreasing as they get farther from the cell semiconductor pattern, andwherein the second interconnection includes a plurality ofinterconnections extending toward the cell semiconductor pattern, thenumber of interconnections decreasing as they get closer to the cellsemiconductor pattern.

The interconnections of the first interconnection and theinterconnections of the second interconnection alternately overlap eachother.

The interconnections of the first interconnection and theinterconnections of the second interconnection overlap each other in anarea not overlapped by the cell semiconductor pattern.

The semiconductor device further includes a third interconnectiondisposed in the same plane as the first and second interconnections.

The third interconnection is disposed on a first side of the firstinterconnection and the second interconnection is disposed on a secondside of the first interconnection.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features of the inventive concept will becomemore apparent by describing in detail exemplary embodiments thereof withreference to the accompanying drawings. In the drawings:

FIG. 1A is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept;

FIG. 1B is a partially enlarged view illustrating part “A” of FIG. 1A,according, to an exemplary embodiment of the inventive concept;

FIGS. 2A and 2B are plan views each illustrating components of FIG. 1A,according to an exemplary embodiment of the inventive concept;

FIGS. 3A, 3B and 3C are plan views each illustrating components of FIG.1A, according to an exemplary embodiment of the inventive concept;

FIG. 4 is a plan view illustrating components of FIG. 1A, according toan exemplary embodiment of the inventive concept;

FIG. 5 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept;

FIGS. 6A, 6B, and 7 are plan views each illustrating components of FIG.5, according to an exemplary embodiment of the inventive concept;

FIG. 8 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept;

FIGS. 9A, 9B, 9C, 9D, 9E, 9F and 9G are cross-sectional viewsillustrating a method of forming a semiconductor device in accordancewith an exemplary embodiment of the inventive concept;

FIG. 10 is a diagram illustrating a semiconductor module in accordancewith an exemplary embodiment of the inventive concept;

FIG. 11 is a block diagram illustrating an electronic system inaccordance with an exemplary embodiment of the inventive concept; and

FIG. 12 is a block diagram illustrating an electronic system inaccordance with an exemplary embodiment of the inventive concept,

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, exemplary embodiments of the inventive concept will bedescribed detail with reference to the accompanying drawings. Theinventive concept may, however, be embodied in various different formsand should be construed as limited by the embodiments set forth herein.In the drawings, the sizes and relative sizes of layers and regions maybe exaggerated for clarity. The same reference symbols may denote thesame components throughout the specification.

Exemplary embodiments of the inventive concept are described herein withreference to cross-sectional views, plan views, and/or block diagramsthat are schematic illustrations of idealized embodiments. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, the embodiments should not be construed as limited tothe particular shapes of regions illustrated herein but are to includedeviations in shapes that result, for example, from manufacturing.Therefore, regions illustrated in the drawings are schematic in nature,and their shapes are not intended to limit the scope of the inventiveconcept.

Further, it will be understood that when a layer is referred to as beingon another layer or a substrate, the layer may be fir ted directly onthe other layer or the substrate, or there may be an interest layertherebetween.

As used herein, the singular forms “a,” “an,” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

FIG. 1A is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept, FIG.1B is a partially enlarged view illustrating part “A” of FIG. 1A,according to an exemplary embodiment of the inventive concept. FIGS. 2Aand 2B are plan views each illustrating components of FIG. 1A, accordingto an exemplary embodiment of the inventive concept FIGS. 3A, 3B and 3Care plan views each illustrating components of FIG. 1A, according to anexemplary embodiment of the inventive concept. FIG. 4 is a plan viewillustrating components of FIG. 1A, according to an exemplary embodimentof the inventive concept.

First, referring to FIGS. 1A and 1B, a semiconductor substrate 2 may beprovided. The semiconductor substrate 2 may be a substrate formed of asemiconductor material such as silicon.

A first peripheral circuit PTR1 and a second peripheral circuit PTR2 maybe disposed on the semiconductor substrate 2. Each of the first andsecond peripheral circuits PTR1 and PTR2 may include a peripheraltransistor configured with a peripheral gate PG disposed on thesemiconductor substrate 2 and peripheral impurity regions SD disposed inthe semiconductor substrate 2 at both sides of the peripheral gates PG.

An inner dummy gate pattern IDG and an outer dummy gate pattern ODGformed of the same material and with the same thickness as theperipheral gates PG may be disposed on the semiconductor substrate 2.

A first lower interlayer insulating layer LILD1 covering the first andsecond peripheral circuits PTR1 and PTR2 and the dummy gate patterns IDGand ODG may be disposed on the semiconductor substrate 2

Contact plugs PL passing through the first lower interlayer insulatinglayer LILDI and electrically connected to the first and secondperipheral circuits PTR1 and PTR2 may be disposed on the semiconductorsubstrate 2.

First and second peripheral lower interconnections, an inner peripherallower dummy interconnection pattern IDW1, and an outer peripheral lowerdummy interconnection pattern ODW1 formed of the same material and withthe same thickness as the first lower interlayer insulating layer LILD1may be disposed on the semiconductor substrate 2. The first and secondperipheral lower interconnections, the inner peripheral lower dummyinterconnection pattern IDW1, and the outer peripheral lower dummyinterconnection pattern ODW1 may be disposed in the same plane.

A second lower interlayer insulating layer LILD2 covering the tint andsecond peripheral lower interconnections, the inner peripheral lowerdummy interconnection pattern and the outer peripheral lower dummyinterconnection pattern ODW1 may be disposed on the first lowerinterlayer insulating layer LILD1. Contact Otto PL passing through thesecond lower interlayer insulating layer LILD2 may be disposed on thefirst lower interlayer insulating layer LILD1.

A first peripheral upper interconnection structure PWa, a secondperipheral upper interconnection structure PWb, an inner peripheralupper dummy interconnection pattern IDW2, and an outer peripheral upperdummy interconnection pattern ODW2 formed of the same material and withthe same thickness may be disposed on the second lower interlayerinsulating layer LILD2. The first peripheral upper interconnectionstructure PWa, the second peripheral upper interconnection structurePWb, the inner peripheral upper dummy interconnection pattern IDW2, andthe outer peripheral tipper dun iv interconnection pattern ODW2 may beformed in the same plane. The first peripheral upper interconnectionstructure PWa may be electrically connected to the peripheral transistorof the first peripheral circuit PTR1 via the contact plugs PL.

For example, the first peripheral upper interconnection structure PWamay be electrically connected to one of the peripheral impurity regionsSD of the peripheral transistor of the first peripheral circuit PTR Thesecond peripheral upper interconnection structure PWb may beelectrically connected to the peripheral transistor of the secondperipheral circuit PTR2 via the contact plugs PL. For example, thesecond peripheral upper interconnection structure PWb may beelectrically connected to one of the peripheral impurity regions SD ofthe peripheral transistor of the second peripheral circuit PTR2.

A third lower interlayer insulating layer LILD3 covering the first andsecond peripheral upper interconnection structures PWa and PWb, theinner peripheral upper dummy interconnection pattern IDW2, and the outerperipheral upper dummy interconnection pattern ODW2 may be disposed onthe second lower inlet-layer insulating layer LILD2.

A conductive shielding pattern 10 a and an outer conductive dummypattern 10 d formed of the same material and with the same thickness maybe formed on the third lower interlayer insulating layer LILD3. Theconductive shielding pattern 10 a and the outer conductive dummy pattern10 d may be formed of a metal material, such as tungsten, tungstennitride, or titanium nitride.

In an exemplary embodiment of the inventive concept, the conductiveshielding pattern 10 a may cover the first and second peripheralcircuits PTR1 and PTR2,

A fourth lower interlayer insulating layer LILD4 covering the conductiveshielding pattern 10 a and the outer conductive dummy pattern 10 d maybe formed on the third lower interlayer insulating layer LILD3.

The first to fourth lower interlayer insulating layers LILD1 to LILD4may configure a lower interlayer insulating layer LILD.

The outer dummy gate pattern ODG, the outer peripheral lower dummyinterconnection pattern ODW1, the outer peripheral upper dummyinterconnection pattern ODW2, and the outer conductive dummy pattern 10d may be vertically stacked sequentially and configure a lower outerdummy structure LDS.

The inner dummy gate pattern IDG, the inner peripheral lower dummyinterconnection pattern IDW1, and the inner peripheral upper dummyinterconnection pattern IDW2 may be vertically stacked sequentially andconfigure an inner dummy structure IDS.

A buffer insulating layer 12 may be disposed on the fourth lowerinterlayer insulating layer LILD4. The buffer insulating layer 12 mayhave a different etching selectivity than the lower interlayerinsulating layer LILD. For example, the buffer insulating layer 12 maybe formed of silicon nitride, and the lower interlayer insulating layerLILD may be formed of silicon oxide.

A cell semiconductor pattern 14 c and semiconductor dummy patterns 14 dformed of the same material and with the same thickness and may bedisposed on the buffer insulating layer 12. The cell semiconductorpattern 14 c may be co-planar with the semiconductor dummy patterns 14d.

The cell semiconductor pattern 14 c may be a cell semiconductor bodypattern used as a body of a semiconductor device. The semiconductordummy patterns 14 d may be a semiconductor support pattern, or anelectrically isolated semiconductor pattern, and referred to hereinafterinterchangeably.

The cell semiconductor pattern 14 c and the semiconductor dummy patterns14 d may be formed of silicon. The cell semiconductor pattern 14 c andthe semiconductor dummy patterns 14 d may be formed of dopedpolysilicon.

The cell semiconductor pattern 14 c may include a high concentrationimpurity region HIR, a low concentration impurity region LIR, a cellsource impurity region 42, and a cell body, contact impurity region 50.The high concentration impurity region HIR, the low concentrationimpurity region LIR, and the cell body contact impurity region 50 may bea first conductivity type (e.g., a p-type conductivity), and the cellsource impurity region 42 may be a second conductivity type (e.g, ann-type conductivity) different from the first conductivity type. The lowconcentration impurity region LIR may be disposed on the highconcentration impurity region HIR, and have a lower impurityconcentration than the high concentration impurity region HIR. The cellbody contact impurity region 50 may have a higher impurity concentrationthan the low concentration impurity region LIR.

The first and second peripheral circuits PTR1 and PTR2 may be disposedbetween the semiconductor substrate 2 and the cell semiconductor pattern14 c.

The cell semiconductor pattern 14 c may overlap the first and secondperipheral circuits PTR1 and PTR2, and the inner dummy structure IDS.The cell semiconductor pattern 14 c may not overlap the lower outerdummy structure LDS.

The first and second peripheral upper interconnection structures PWa andPWb may be disposed between the semiconductor substrate 2 and the cellsemiconductor pattern 14 c, and portions thereof may extend away fromthe cell semiconductor pattern 4 c so as to be no longer underneath thecell semiconductor pattern 14 c. The conductive shielding pattern 10 amay be disposed between the semiconductor substrate 2 and the cellsemiconductor pattern 14 c.

In an exemplary embodiment of the inventive concept, the conductiveshielding pattern 10 a may have a greater width or size than the cellsemiconductor pattern 18 c.

An intermediate interlayer insulating layer 16 may be disposed on sidesurfaces of the cell semiconductor pattern 14 c and the semiconductordummy patterns 14 d. The intermediate interlayer insulating layer 16 maybe formed of silicon oxide.

Cell gate conductive patterns 38 arranged in a third direction Zperpendicular to the cell semiconductor pattern 14 c may be disposed onthe cell semiconductor pattern 14 c. The cell gate conductive patterns38 may include word lines of a memory device. End portions of the cellgate conductive patterns 38 may be disposed in a step structure thatgradually descends in a first direction X.

Cell interlayer insulating layers 20 a may be disposed between thelowermost pattern of the cell gate conductive patterns 38 and the cellsemiconductor pattern 14 c and between the cell gate conductive patterns38. The cell interlayer insulating layers 20 a may be formed of siliconoxide.

Molding patterns 22 a may be disposed on the cell semiconductor pattern14 c in a second direction Y perpendicular to the first direction X. Endportions of the molding patterns 22 a may be disposed in a stepstructure that gradually descends in the first direction X. The moldingpatterns 22 a may be co-planar with the cell gate conductive patterns38. A first upper interlayer insulating layer UILD1 having a flatsurface may be disposed on the cell gate conductive patterns 38, themolding pattern 22 a, and the cell interlayer insulating layers 20 a.

Cell vertical structures CV passing through the cell gate conductivepatterns 38 and connected to the cell semiconductor pattern 14 c may bedisposed on the semiconductor substrate 2. Each of the cell verticalstructures CV ma include a first cell dielectric layer (referencenumeral 27 in FIG. 1B), a cell semiconductor layer (reference numeral 28in FIG. 1B), a core insulating pattern (reference numeral 29 in FIG.11B), and a cell pad pattern 30. The cell pad pattern 30 may be disposedon the core insulating pattern 29. The cell semiconductor layer 28 maybe connected to the cell semiconductor pattern 14 c. The cellsemiconductor layer 28 may be disposed on side and bottom surfaces ofthe core insulating pattern 29. The first cell dielectric layer 27 maybe disposed on an outer side of the cell semiconductor layer 28. Thefirst cell dielectric layer 27 may be interposed between the cellsemiconductor layer 28 and the cell gate conductive patterns 38. Thecell semiconductor layer 28 and the cell pad pattern 30 may be formed ofsilicon. For example, the cell semiconductor layer 28 and the cell padpattern 30 may be formed of polysilicon. The cell pad pattern 30 mayhave an n-type conductivity. A second cell dielectric layer 37 may bedisposed between the cell gate conductive patterns 38 and the cellvertical structures CV.

One of the first and second cell dielectric layers 27 and 37 may includea data storage layer that stores data. For example, the first celldielectric layer 27 may include a tunneling dielectric layer (e.g.,silicon oxide) and a data storage layer (e.g., a silicon nitride layerthat traps charges) sequentially formed from the cell semiconductorlayer 28. The second cell dielectric layer 37 may include a shieldingdielectric material. The first and second cell dielectric layers 27 and37 may have the same structure as a dielectric layer including a datastorage layer disposed between a control gate and a body of a celltransistor in a NAND flash memory device. However, the inventive conceptmay not be limited to the structure of the NAND flash memory device, andmay be applied to a variety of memory devices.

A region in which the cell vertical structures CV are disposed on thecell semiconductor pattern 34 c may be a cell array region CA.

A second upper interlayer insulating layer UILD2 may be disposed on thefirst upper interlayer insulating layer UILD1 and the cell verticalstructures CV. A cell source pattern 46 passing through the first andsecond upper interlayer insulating layers UILD1 and UILD2 and the cellgate conductive patterns 38 may be disposed on the cell semiconductorpattern 14 c. The cell source pattern 46 may be disposed on the cellsource impurity region 42 of the cell semiconductor pattern 14 c. Thecell source pattern 46 may be electrically connected to the cell sourceimpurity region 42 of the cell semiconductor pattern 14 c. The cellsource pattern 46 may be formed of a conductive material (e.g, Ti, TiN,or W). Insulating spacers 40 may be disposed on outer sides of the cellsource pattern . The insulating spacers 40 may be disposed between thecell source pattern 46 and the cell gate conductive patterns 38.

A third upper interlayer insulating layer UILD3 may be disposed on thesecond upper interlayer insulating layer UILD2 and the cell sourcepattern 46. Cell gate lower contact plugs 56 passing through the firstto third upper interlayer insulating layers UILD1 to UILD3 andelectrically connected to the cell gate conductive patterns 38 may bedisposed on the cell semiconductor pattern 14 c.

A first peripheral lower contact plug 52 a passing through the first tothird upper interlayer insulating layers UILD1 to UILD3, the bufferinsulating layer 12, and the third and fourth lower interlayerinsulating layers LILD3 and LILD4 and electrically connected to thefirst peripheral upper interconnection structure PWa may be disposed onthe semiconductor substrate 2. A second peripheral lower contact plug 52b passing through the first to third upper interlayer insulating layersUILD1 to UILD3, the buffer insulating layer 12, and the third and fourthlower imerlayer insulating layers LILD3 and LILD4 and electricallyconnected to the second peripheral upper interconnection structure PWbmay be disposed on the semiconductor substrate 2. A ground lower contactplug 54 passing through the first to third upper interlayer insulatinglayers UILD1 to UILD3 the buffer insulating layer 12, and the fourthlower interlayer insulating layer LILD4 and electrically connected to acontact portion of the conductive shielding pattern 10 a may be disposedon the semiconductor substrate 2. A body contact plug 51 passing throughthe first to third upper interlayer insulating layers UILD1 to UILD3 andconnected to the cell semiconductor pattern 14 c may be disposed on thesemiconductor substrate 2.

In an exemplary embodiment of the inventive concept, the body contactplug 51 may pass through the first to third upper interlayer insulatinglayers UILD1 to UILD3 and the last of cell interlayer insulating layers20 a and molding patterns 22 a to be electrically connected to the cellbody contact impurity region 50 of the cell semiconductor pattern 14 c.

Peripheral lower contact dummy plugs 58 passing through the first tothird upper interlayer insulating layers UILD1 to UILD3 may be disposedon the semiconductor substrate 2. The peripheral lower contact dummyplugs 58 may pass through the first to third upper interlayer insulatinglayers UILD1 to UILD3 and may be disposed on the semiconductor dummypatterns 14 d. The peripheral lower contact dummy plugs 58 may passthrough the first to third upper interlayer insulating layers UILD1 toUILD3 to be electrically connected to the semiconductor dummy patterns14 d.

A fourth upper interlayer insulating layer UILD4 may be disposed on thethird upper interlayer insulating layer UILD3. Cell bit line contactplugs 60 passing through the second to fourth upper interlayerinsulating layers UILD2 to UILD4 and electrically connected to the cellpad pattern 30 of the cell vertical structures CV may be disposed on thesemiconductor substrate 2.

A first peripheral upper contact plug 62 a passing through the fourthupper interlayer insulating layer UILD4 and electrically connected tothe first peripheral lower contact plug 52 a may be disposed on thesemiconductor substrate 2. The first peripheral lower contact plug 52 aand the first peripheral upper contact plug 62 a may configure a firstperipheral contact structure 72 a. A second peripheral upper contactplug 62 b passing through the fourth upper interlayer insulating layerUILD4 and electrically connected the second peripheral lower contactplug 52 b may be disposed on the semiconductor substrate 2. The secondperipheral lower contact plug 52 b and the second peripheral uppercontact plug 62 b may configure a second peripheral contact structure 72b. A ground upper contact plug 64 passing through the fourth upperinterlayer insulating layer UILD4 and electrically connected to theground lower contact plug 54 may be disposed on the semiconductorsubstrate 2. The ground lower contact plug 54 and the ground uppercontact plug 64 may configure a ground contact structure 74. Cell gateupper contact plugs 66 passing through the fourth upper interlayerinsulating layer UILD4 and electrically connected to the cell gate lowercontact plugs 56 may be disposed on the semiconductor substrate 2. Thecell gate lower contact plugs 56 and the cell gate upper contact plugs66 may configure cell gate contact structures 76.

Peripheral upper contact dummy plugs 68 passing through the fourth upperinterlayer insulating layer UILD4 and disposed on the peripheral lowercontact dummy plugs 58 may be disposed on the semiconductor substrate 2.The peripheral lower contact dummy plugs 58 and the peripheral uppercontact dummy plugs 68 may configure a peripheral dummy contactstructure 78.

A bit line 82 a, a second peripheral interconnection 82 b, a groundinterconnection 84, cell gate interconnection 86, and a peripheralinterconnection dummy structure 88 may be disposed on the fourth upperinterlayer insulating layer UILD4.

The bit line 82 a may be electrically connected to the cell bit linecontact plugs 60 and the first peripheral contact structure 72 a.Accordingly, the bit line 82 a may electrically connect the cell padpattern 30 of the cell vertical structure CV to the first peripheralcircuit PTR1. The second peripheral interconnection 82 b may beelectrically connected to the second peripheral contact structure 72 b.The ground interconnection 84 may be electrically connected to theground contact structure 74. The cell gate interconnection 86 may beelectrically connected to the cell gate contact structure 76. Theperipheral interconnection dummy structure 88 may be connected to theperipheral dummy contact structure 78. The peripheral interconnectiondummy structure 88 and the peripheral dummy contact structure 78 mayconfigure an upper outer dummy structure UDS.

A fifth upper interlayer insulating layer UILD5 may be disposed on thefourth upper interlayer insulating layer UILD4. A first contact plug 90a passing through the fifth upper interlayer insulating layer UILD5 andelectrically connected to the cell gate interconnection 86, and a secondcontact plug 90 b passing through the fifth upper interlayer insulatinglayer UILD5 and electrically connected to the second peripheralinterconnection 82 b may be disposed on the semiconductor substrate 2.

A word line interconnection structure 92 electrically connected to thefirst and second contact plugs 90 a and 90 b may be disposed on thefifth upper interlayer insulating layer UILD5, The word lineinterconnection structure 92 may electrically connect the cell gateconductive pattern 38, in other words, a word line, to the secondperipheral circuit PTR2.

FIGS. 2A and 2B are plan views each illustrating a positionalrelationship between the cell semiconductor pattern and peripheralinterconnections, and the dummy interconnection patterns of FIG. 1,according to an exemplary embodiment of the inventive concept. A layoutof one of the first peripheral upper interconnection structure Pwaelectrically connected to the bit line 82 a or the second peripheralupper interconnection structure PWb electrically connected to the cellgate conductive pattern 38 such as a word line, and a layout of theouter peripheral upper dummy interconnection pattern ODW2 will bedescribed with reference to FIGS. 2A and 2B, respectively.

In FIG. 2A, the reference numeral “PW” may be understood as a“peripheral interconnection structure,” in other words, one of the firstand second peripheral upper interconnection structures PWa and PWb inFIG. 1A.

First, referring to FIG. 2A along with FIG. 1A, the peripheralinterconnection structure PW may extend away, from the cellsemiconductor pattern 14 c and be configured with a plurality ofperipheral interconnections. The peripheral interconnection structure PWmay include peripheral interconnections extending away from the cellsemiconductor pattern 14 c in different lengths. In FIG. 2A, aninterconnection density of the peripheral interconnections of theperipheral interconnection structure PW may be lower in the order of theportion marked by a line I-I′, the portion marked by a line II-II′, theportion marked b a line III-III′, and the portion marked by a lineIV-IV′, The interconnection density of the peripheral interconnectionstructure PW may decrease as a distance from cell semiconductor pattern14 c increases.

The outer peripheral upper dummy interconnection pattern ODW2 may bedisposed such that a pattern density thereof decreases approaching thecell semiconductor pattern 14 c. For example, as illustrated in theportion marked by the line IV-IV′ in FIG. 2A, the pattern density of theouter peripheral upper dummy interconnection pattern ODW2 may be higherin an area where the peripheral interconnections of the peripheralinterconnection structure PW are not disposed, and may decreaseapproaching the portions marked by the lines III-III′ and II-II′ in FIG.2A. Accordingly, the peripheral interconnection structure PW and theouter peripheral upper dummy interconnection pattern ODW2 maycomplementarily function to uniformize the pattern density on thesemiconductor substrate 2.

As shown in the portions marked by the lines III-III′ and II-II′ in FIG.2A, areas having a low pattern density in the outer peripheral upperdummy interconnection pattern ODW2 and areas having a lowinterconnection density of the peripheral interconnection structure PWmay alternately overlap to increase the overall pattern density.Accordingly, in FIG. 2A, the portions marked try the lines I-I′, II-II′,III-III′, and IV-IV′ may have substantially similar or the same patterndensity.

In an exemplary embodiment of the inventive concept, the outerperipheral upper dummy interconnection pattern ODW2 may be arranged in aline shape, but is not limited thereto. For example, the outerperipheral upper dummy interconnection pattern ODW2 may be arranged as aplurality of dot-shaped patterns ODW2′ as illustrated in FIG. 2B. Here,the dot shape may be a rectangular shape, a square shape or a circularshape.

FIG. 3A is a plan view illustrating the cell semiconductor pattern 14 c,the semiconductor dummy patterns 14 d, the conductive shielding pattern10 a, and the peripheral interconnection structure PW of FIGS. 1A and2A, according to an exemplary embodiment of the inventive concept.

Referring to FIG. 3A along with FIG. 1A, the cell semiconductor pattern14 c may be disposed on the semiconductor substrate 2. The conductiveshielding pattern 10 a may overlap the cell array region CA disposed onthe cell semiconductor pattern 14 c. The conductive shielding pattern 10a may have a greater planar area and/or width than the cell array regionCA.

The conductive shielding; pattern 10 a may prevent crosstalk between thecell array region CA disposed on the cell semiconductor pattern 14 c,and the first and second peripheral circuits PTR1 and PTR2. Theconductive shielding pattern 10 a may prevent crosstalk between the cellarray region CA disposed on the cell semiconductor pattern 14 c, and thefirst and second peripheral upper interconnection structures PWa andPWb.

At least a portion of the conductive shielding pattern 10 a may extendaway from the cell semiconductor pattern 14 c. The conductive shieldingpattern 10 a may overlap the cell semiconductor pattern 14 c and have agreater planar area and/or width than the cell semiconductor pattern 14c.

The peripheral interconnection structure PW may include the secondperipheral upper interconnection structure PWb and the first peripheralupper interconnection structure PWa, as illustrated in FIG. 1A. Theperipheral interconnection structure PW may extend away from the cellsemiconductor pattern 14 c and away from the conductive shieldingpattern 10 a.

A plurality of semiconductor dummy patterns 14 d may be disposed on thesemiconductor substrate 2, and each of the semiconductor dummy patterns14 d may have a dot shape. Here, the dot shape may be a rectangularshape, a square shape or a circular shape, but is not limited thereto.The shape of the semiconductor dummy patterns 14 d will be describedwith reference to FIGS. 3B and 3C.

Referring to FIG. 38, the semiconductor dummy patterns 141 d′ may be aplurality of line patterns.

Referring to FIG. 3C, the semiconductor dummy patterns 14 d″ may beplate-type patterns including openings 14 h exposing the cellsemiconductor pattern 14 c and the peripheral interconnection structurePW.

FIG. 4 is a plan view illustrating shapes of the bit line 82 a and theword line interconnection structure 92 of FIG. 1A, according to anexemplary embodiment of the inventive concept.

Referring to FIG. 4 along with FIG. 1A, the bit line 82 a may cress thecell array region CA in the second direction Y and extend away from thecell semiconductor pattern 14 c. The bit line 82 a may overlap the firstperipheral upper interconnection structure PWa disposed at an outer side(or, edge) of the cell semiconductor pattern 14 c.

The cell array region CA may be disposed on the cell semiconductorpattern 14 c and a staircase area SA may be disposed on the cellsemiconductor pattern 14 c adjacent to the cell array region CA. Thecell gate conductive patterns 38 may cross the cell array region CA inthe first direction X and extend into the staircase area SA. The cellgate conductive patterns 38 may be disposed in a step structure in thestaircase area SA.

The word line interconnection structure 92 may extend away from the cellsemiconductor pattern 14 c in the staircase area SA, and overlap thesecond peripheral upper interconnection structure PWb disposed at anouter side (or, edge) of the cell semiconductor pattern 14 c.

In FIGS. 1A to 4, a structure including a single cell semiconductorpattern 14 c is described. However, the inventive concept is not limitedthereto. A structure in which a plurality of the cell semiconductorpatterns 14 c described in reference to FIGS. 1A to 4 are disposed willbe described with reference to FIG. 5.

Referring to FIG. 5 along with FIG. 1A, the first and second peripheralcircuits PTR1 and PTR2, the conductive shielding pattern 10 a, and thecell semiconductor pattern 14 c, described with reference to FIG. 1A,may be disposed on the semiconductor substrate 2, and the cell arrayregion CA may be disposed on the cell semiconductor pattern 14 c. Thecell semiconductor pattern 14 c may be referred to as a first cellsemiconductor pattern, and the cell array region CA may be referred toas a first cell array region.

A second cell semiconductor pattern 14 c′ formed of the same materialand having the same structure as the first cell semiconductor pattern 14c may be disposed on the semiconductor substrate 2.

Third and fourth peripheral circuits PTR1 and PTR2′ corresponding to thefirst and second peripheral circuits PTR1 and PTR2 described withreference to FIG. 1A may be disposed between the semiconductor substrate2 and the second cell semiconductor pattern 14 c′. In addition, a thirdperipheral upper interconnection structure PWa′ electrically connectedto the third peripheral circuit PTR1′ and a fourth peripheral upperinterconnection structure PWb′ electrically connected to the fourthperipheral circuit PTR2′ may be disposed between the semiconductorsubstrate 2 and the second cell semiconductor pattern 14 c′.

A conductive shielding pattern 10 a′ disposed between the semiconductorsubstrate 2 and the second cell semiconductor pattern 14 c′ may bedisposed on the third and fourth peripheral circuits PTR1′ and PTR2′ andthe third and fourth peripheral upper interconnection structures PWa′and PWb′. The conductive shielding pattern 10 a′ may be formed of thesame material and have the same structure as the conductive shieldingpattern 10 a disposed between the semiconductor substrate 2 and thefirst cell semiconductor pattern 14 c.

A cell array region CA′ corresponding to the cell array region CA may bedisposed on the second cell semiconductor pattern 14 c′.

A dummy structure as illustrated in FIG. 1A may be disposed between thefirst cell semiconductor pattern 14 c and the second cell semiconductorpattern 14 c′. The dummy structure may be the lower outer dummystructure LDS, the semiconductor dummy patterns 14 d, and the upperouter dummy structure UDS.

The first and third peripheral upper interconnection structures PWa andPWa′ and the outer peripheral upper dummy interconnection pattern ODW2disposed between the first cell semiconductor pattern 14 c and thesecond cell semiconductor pattern 14 c′ in FIG. 1 will be described withreference to FIG. 6A.

Referring to FIG. 6A along with FIG. 5, each of the first and thirdperipheral upper interconnection structures PWa and PWa′ may beconfigured with a plurality of peripheral interconnections.

The first upper peripheral interconnection structure PWa may extend awayfrom the first cell semiconductor pattern 14 c. The first upperperipheral interconnection structure PWa may extend from an outer sideof the first cell semiconductor pattern 14 c toward the second cellsemiconductor pattern 14 c′. An interconnection density of the firstupper peripheral interconnection structure PWa may decrease as adistance from the first cell semiconductor pattern 14 c increases, asdescribed with reference to FIG. 2A.

The third peripheral upper interconnection structure PWa′ may extendaway from the second cell semiconductor pattern 14 c′. The thirdperipheral upper interconnection structure. PWa′ may extend from anouter side of the second cell semiconductor pattern 14 c′ toward thefirst cell semiconductor pattern 14 c. An interconnection density of thethird peripheral tipper interconnection structure PWa′ may decrease as adistance from the second cell semiconductor pattern 14 c′ increases, asdescribed with reference to FIG. 2A.

The outer peripheral upper dummy interconnection pattern ODW2 may bedisposed such that a pattern density thereof decreases approaching thefirst and second cell semiconductor patterns 14 c and 14 c′ in the samemanner as described with reference to FIG. 2A. Accordingly, the firstthe third peripheral upper interconnection structures PWa and PWa′ andthe outer peripheral upper dummy interconnection pattern ODW2 maycomplementarily serve to uniformize the pattern density on thesemiconductor substrate 2.

In an exemplary embodiment of the inventive concept, the outerperipheral upper dummy interconnection pattern ODW2 may be disposed inline shapes, but is not limited thereto. For example, the outerperipheral upper dummy interconnection pattern ODW2 may be disposed in aplurality of dot-shaped patterns ODW2′ as illustrated in FIG. 6B. Here,the dot shape may be a rectangular shape, a square shape or a circularshape.

FIG. 7 is a plan view for describing the first and second cellsemiconductor patterns 14 c and 14 c′, the semiconductor dummy patterns14 d, the conductive shielding patterns 10 a and 10 a′, and theperipheral interconnection structures PW and PW′.

Referring to FIG. 3A along with FIG. 1A, the first and second cellsemiconductor patterns 14 c and 14 c′ may be disposed on thesemiconductor substrate 2. The conductive shielding patterns 10 a and 10a′ may have a greater planar area than the cell array regions CA andCA′. The conductive shielding patterns 10 a and 10 a′ may have a greaterplanar area than the first and second cell semiconductor patterns 14 cand 14 c′.

The semiconductor dummy patterns 14 d may be disposed around the firstand second cell semiconductor patterns 14 c and 14 c′. In addition, thesemiconductor dummy patterns 14 d may be disposed between the first andsecond cell semiconductor patterns 14 c and 14 c′.

FIG. 8 is a cross-sectional view illustrating a semiconductor device inaccordance with an exemplary embodiment of the inventive concept.

Referring to FIG. 8, the first and second peripheral circuits PTR1 andPTR2, the first and second peripheral upper interconnection structuresPWa and PWb, the inner dummy structure IDS, the lower outer dummystructure LDS, the upper outer dummy structure UDS, the conductiveshielding pattern 10 a, the lower interlayer insulating layer LILD, andthe buffer insulating layer 12 may be disposed on the semiconductorsubstrate 2, as described with reference to FIG. 1A.

A cell semiconductor pattern 114 c and a dummy semiconductor pattern 114d may be disposed on the lower interlayer insulating layer LILD. Thecell semiconductor pattern 114 c and the dummy semiconductor pattern 114d may be formed with the same material and the same thickness. The cellsemiconductor pattern 114 c and the dummy semiconductor pattern 114 dmay be formed of doped silicon. The cell semiconductor pattern 114 c andthe dummy semiconductor pattern 114 d may be formed of dopedpolysilicon. The cell semiconductor pattern 114 c may be co-planar withthe dummy semiconductor pattern 114 d.

Cell gate conductive patterns 138 vertically stacked on the cellsemiconductor pattern 114 c and spaced apart from each other may bedisposed on the semiconductor substrate 2. Cell interlayer insulatingpatterns 120 a may be disposed between the cell gate conductive patterns138.

A plurality of cell vertical structures CV1 and CV2 passing through thecell gate conductive patterns 138 and the cell interlayer insulatingpatterns 120 a may be disposed on the semiconductor substrate 2. Asource line SL connecting first cell vertical structures CV1 may bedisposed on a pair of adjacent first cell vertical structures CV1 amongthe cell vertical structures CV1 and CV2. Second cell verticalstructures CV2 may be disposed at both sides of the first cell verticalstructures CV1. A bit line 82 a may be disposed on the second cellvertical structures CV2. Bit line contact plugs 60 may be disposedbetween the bit line 82 a and the second cell vertical structures CV2.The bit line contact plugs 60 may connect the hit line 82 a to thesecond cell vertical structures CV2. The first and second cell verticalstructures CV1 and CV2 may be connected to each other with a pipestructure through a groove G formed in the cell semiconductor pattern114 c. The first and second cell vertical structures CV1 and CV2 may beconnected to each other by extending through the groove G in the cellsemiconductor pattern 114 c.

Each of the first and second cell vertical structures CV1 and CV2 mayinclude a cell dielectric layer 127 interposed between a channelsemiconductor layer 128 and the cell gate conductive patterns 138, andbetween the channel semiconductor layer 128 and the cell semiconductorpattern 114 c. The cell dielectric layer 127 may include a firstdielectric laver, a data storage layer capable of trapping charges, anda second dielectric layer. The cell semiconductor pattern 114 c may be aback-gate.

Next, a method of forming a semiconductor device in accordance with anexemplary embodiment of the inventive concept will be described withreference to FIGS. 9A, 9B, 9C, 91D, 9E, 9F and 9G.

Referring to FIG. 9A, a semiconductor substrate 2 may be prepared. Thesemiconductor substrate 2 may be formed of a semiconductor material suchas silicon. A first peripheral circuit PTR1 and a second peripheralcircuit PTR2 may be formed on the semiconductor substrate 2. Each of theFirst and second peripheral circuits PTR1 and PTR2 may includeperipheral transistors configured with peripheral gates PG disposed onthe semiconductor substrate 2 and first and second peripheral impurityregions SD formed in the semiconductor substrate 2 at both sides of theperipheral gates PG.

Dummy gate patterns may be formed on the semiconductor substrate 2simultaneously with the peripheral gates PG of the first and secondperipheral circuits PTR1 and PTR2. The dummy gate pattern may include aninner dummy gate pattern IGD and an outer dummy gate pattern OGD. Afirst lower interlayer insulating layer LILD1 covering the first andsecond peripheral circuits PTR1 and PTR2 and the dummy gate patterns IDGand ODG may be formed on the semiconductor substrate 2.

The formation of the first lower interlayer insulating layer LILD1 mayinclude depositing an insulating material layer on the substrate 2including the first and second peripheral circuits PTR1 and PTR2 and theinner and outer dummy gate patterns IDG and ODG, and planarizing theinsulating material layer. Since the inner and outer dummy gate patternsIDC and ODG further uniformize a pattern density on the semiconductorsubstrate 2, a level difference of an upper surface of the insulatingmaterial layer used to form the patterns having the uniform density maybe minimized. The upper surface of the insulating material layer havingsuch a minimized level difference may be planarized without the dishingphenomenon occurring. Accordingly, the first lower interlayer insulatinglayer LILD1 may be formed to have a more planar upper surface.

Contact plugs PL passing through the first lower interlayer insulatinglayer LILD1 and electrically connected to the first and secondperipheral circuits PTR1 and PTR2 may be formed on the semiconductorsubstrate 2.

First and second peripheral lower interconnections, and peripheral lowerdummy interconnection patterns may be formed on the first lowerinterlayer insulating layer LILD1. The peripheral lower dummyinterconnection patterns may include an inner peripheral lower dummyinterconnection pattern IDWI and an outer peripheral lower dummyinterconnection pattern ODW1.

A second lower interlayer insulating layer LILD2 covering the first andsecond peripheral lower interconnections and the inner and outerperipheral lower dummy interconnection patterns IDW1 and ODW1 may beformed on the first lower interlayer insulating layer LILDI. Since theinner and outer peripheral lower dummy interconnection patterns IDW1 andODW1 uniformize the overall pattern density, the second lower interlayerinsulating layer LILD2 may have a more planar upper surface, similar tothe first lower interlayer insulating layer LILD1.

Contact plugs PL passing through the second lower interlayer insulatinglayer LILD2 may be formed on the semiconductor substrate 2. A firstperipheral upper interconnection structure PWa and second peripheralupper interconnection structure PWb may be formed on the second lowerinterlayer insulating layer LILD2. The first peripheral upperinterconnection structure PWa may be electrically connected totransistors of the first peripheral circuit PTR1 via the contact plugsPL formed in the first and second lower interlayer insulating layersLILD1 and LILD2. The second peripheral upper interconnection structurePWb may be electrically connected to peripheral transistors of thesecond peripheral circuit PTR2 via the contact plugs PL formed in thefirst and second lower interlayer insulating layers LILD1 and LILD2.

Peripheral dummy upper interconnection patterns may be formed on thesecond lower interlayer insulating layer LILD2 simultaneously with thefirst and second peripheral upper interconnection structures PWa andPWb. The peripheral upper dummy interconnection patterns may include aninner peripheral upper dummy interconnection pattern IDW2 and an outerperipheral upper dummy interconnection pattern ODW2.

A third lower interlayer insulating layer LILD3 covering the first andsecond peripheral upper interconnection structures PWa and PWb and theinner and outer peripheral upper dummy interconnection patterns IDW2 andODW2 may be formed on the second lower interlayer insulating layerLILD2. Since the inner and outer peripheral upper dune interconnectionpatterns IDW2 and ODW2 uniformize the overall pattern density, the thirdlower interlayer insulating layer LILD3 may have a more planar uppersurface, similar to the first lower interlayer insulating layer LILD1.

A conductive shielding pattern 10 a and an outer conductive dummypattern 10 d may be formed on the third lower interlayer insulatinglayer LILD3. The conductive shielding pattern 10 a and the outerconductive dummy pattern 10 d may be formed of a metal material, such astungsten, tungsten nitride, and titanium nitride.

In an exemplary embodiment of the inventive concept, the conductiveshielding pattern 10 a may cover the first and second peripheralcircuits PTR1 and PTR2.

A fourth lower interlayer insulating layer LILD4 covering the conductiveshielding pattern 10 a and the outer conductive dummy pattern 10 d maybe formed on the third lower interlayer insulating layer. Due to theouter conductive dummy pattern 10 d, the fourth lower interlayerinsulating layer LILD4 may be formed to be more planar.

The first to fourth lower interlayer insulating layers LILD1 to LILD4may configure a lower interlayer insulating layer LILD.

The outer dummy gate pattern ODG, the outer peripheral lower dummyinterconnection pattern ODW1, the outer peripheral upper dummyinterconnection pattern ODW2, and the outer conductive dummy gatepattern 10 d may configure a lower outer dummy structure LDS. The innerdummy gate pattern IDG, the inner peripheral lower dummy interconnectionpattern IDWI, and the inner peripheral upper dummy interconnectionpattern IDW2 may configure an inner dummy structure IDS.

Accordingly, since the lower outer dummy structure LDS and the innerdummy structure IDS uniformize a density of patterns disposed on thesame level, the lower interlayer insulating layer L LD may have a moreplanar upper surface.

Referring to FIG. 9B, a buffer insulating layer 12 may be formed on thelower interlayer insulating layer LILD. The buffer insulating layer 12may have a different etching selectivity from the lower interlayerinsulating layer LILD. For example, the buffer insulating layer 12 maybe formed of silicon nitride, and the lower interlayer insulating layerLILD may be formed of silicon oxide.

A cell semiconductor pattern 14 c and semiconductor dummy patterns 14 dmay be formed by forming a semiconductor layer on the buffer insulatinglayer 12 and patterning the semiconductor layer. The cell semiconductorpattern 14 c may be a cell semiconductor pattern, and the semiconductordummy pattern 14 d may be a semiconductor support pattern or asemiconductor dummy pattern.

The cell semiconductor pattern 14 c and the semiconductor dummy patterns14 d may have the same thickness. Upper surfaces of the cellsemiconductor pattern 14 c and the semiconductor dummy patterns 14 d maybe coplanar.

The cell semiconductor pattern 14 c and the semiconductor dummy patterns14 d may be formed of silicon, The cell semiconductor pattern, 14 c andthe semiconductor dummy patterns 14 d may be formed of dopedpolysilicon. For example, the cell semiconductor pattern 14 c and thesemiconductor dummy patterns 14 d may be formed of Hype doped silicon.The cell semiconductor pattern 14 c may include a high concentrationimpurity region HIR and a low concentration impurity region LIR disposedon the high concentration impurity region HIR and having a lowerimpurity concentration than the high concentration impurity region HIR.

The cell semiconductor pattern 14 c may overlap the first and secondperipheral circuits PTR1 and PTR2. The cell semiconductor pattern 14 cmay overlap the first and second peripheral upper interconnectionstructures PWa and PWb electrically connected to the first and secondperipheral circuits PTR1 and PTR2. The first and second peripheral upperinterconnection structures PWa and PWb may extend. Fay from the cellsemiconductor pattern 14 c to be electrically connected to an externaldevice, The cell semiconductor pattern 14 c may overlap the conductiveshielding pattern 10 a. The cell semiconductor pattern 14 c may beformed to have a smaller width or smaller size than the conductiveshielding pattern 10 a.

Referring to FIG. 9C, an intermediate interlayer insulating layer 16 maybe formed by forming an insulating layer on the semiconductor substrate2 including the cell semiconductor pattern 14 c and the semiconductordummy patterns 14 d and planarizing the insulating layer until the cellsemiconductor pattern 14 c and the semiconductor dummy patterns 14 d areexposed. The intermediate interlayer insulating layer 16 may be formedof silicon oxide.

While planarizing the insulating layer to form the intermediateinterlayer insulating layer 16, the cell semiconductor pattern 14 c mayprevent a dishing phenomenon from occurring on the intermediateinterlayer insulating layer 16. For example, while planarizing theinsulating layer, the cell semiconductor pattern 14 c may serve as asupport, which can help prevent the dishing phenomenon from occurring.

First molding layers 20 and second molding layers 22 may be alternatelyand repeatedly formed on the semiconductor substrate 2 including thecell semiconductor pattern 14 c, the semiconductor dummy pane s 14 d,and the intermediate interlayer insulating layer 16. Accordingly, aplurality of first molding layers 20 and a plurality of second moldinglayers 22 may be formed on the semiconductor substrate 2. The firstmolding layer 20 may have a different etching selectivity than thesecond molding layer 22. For example, the first molding layer 20 may beformed of silicon oxide, and the second molding layer 22 may be formedof silicon nitride.

Due to the lower outer dummy structure LDS and the semiconductor dummypatterns 14 d, the first molding layers 20 and the second molding layers22 may be uniformly formed on a planar surface. Accordingly, a conditionin which portions of the first molding layers 20 and the second moldinglayers 22 sag down toward the semiconductor substrate 2, may beprevented. Thus, the uniformly formed first molding layers 20 and secondmolding layers 22 may facilitate a subsequent process thereof. In otherwords, since a first pair of the first molding layer 20 and the secondmolding layer 22 directly contacting each other are uniformly formed, asecond pair of the first molding lager 20 and the second molding layer22 formed directly on the first pair, may be uniformly formed.Accordingly, the number of process failures and device defects may bereduced, and thus productivity may be increased.

Referring to FIG. 9D, a molding structure MS may be formed by patterningthe first and second molding layers 20 and 22. End portions of thepatterned first and second molding layers 20 and 22 of the moldingstructure MS may have a step structure. The molding structure MS may beformed on the cell semiconductor pattern 14 c.

In art exemplary embodiment of the inventive concept, the lowermostfirst molding layer of the first molding layers 20 may not be patterned.The lowermost first molding layer may be the first molding layer 20directly above the cell semiconductor pattern 14 c.

Referring to FIG. 9E, a first upper interlayer insulating layer UILD1may be formed on the semiconductor substrate 2 including the moldingstructure MS. The first upper interlayer insulating layer UILD1 may beformed of silicon oxide. The first upper interlayer insulating layerUILD1 may cover the molding structure MS and have a substantially planarupper surface.

Cell vertical structures CV passing through the molding structure MS maybe formed on the semiconductor substrate 2. The cell vertical structuresCV may be formed on the cell semiconductor pattern 14 c. The cellvertical structures CV may pass through the first upper interlayerinsulating layer UILD1 and the molding structure MS to be electricallyconnected to the cell semiconductor pattern 14 c.

Each of the cell vertical structures CV may include a first celldielectric layer (reference numeral 27 of FIG. 1B), a cell semiconductorlayer (reference numeral 28 of FIG. 1B), a core insulating pattern(reference numeral 29 of FIG. 1B), and a cell pad pattern 30. Forexample, the formation of the cell vertical structures CV may includeforming holes (reference numeral H of FIG. 1B) passing through the firstupper interlayer insulating layer UILD1 and the molding structure MS,forming the first cell dielectric layers (reference numeral 27 of FIG.1B) on sidewalls of the holes (reference numeral H of FIG. 1B),conformally forming the cell semiconductor layers 28 on thesemiconductor substrate 2 on which the first cell dielectric layers(reference numeral 27 of FIG. 1B) are formed, forming the coreinsulating patterns (reference numeral 29 of FIG. 1B) partially fillingthe holes (reference numeral H of FIG. 1B) on the cell semiconductorlayers 28, forming pad layers on the semiconductor substrate 2 includingthe core insulating patterns (reference numeral 29 of FIG. 1B), andforming the cell pad patterns 30 and the cell semiconductor layers(reference numeral 28 of FIG. 1B) in the holes (reference numeral H ofFIG. 1B) by planarizing the pad layers and the cell semiconductor layers28 until the first upper interlayer insulating layer UILD1 is exposed.

The cell semiconductor layer (reference numeral 28 of FIG. 1B) may beconnected to the cell semiconductor pattern 14 c. The cell semiconductorlayer (reference numeral 28 of FIG. 1B) and the cell pad pattern 30 maybe formed of silicon. For example, the cell semiconductor layer(reference numeral 28 of FIG. 1B) and the cell pad pattern 30 may beformed of polysilicon.

The formation of the first cell dielectric layer (reference numeral 27of FIG. 1B) a include forming a data storage material layer (e.g., asilicon nitride layer capable of trapping charges) and a tunnel oxidelayer (e.g., a silicon oxide layer). The cell pad pattern 30 may beformed to have an n-type conductivity using an ion-implantation process.

Referring to FIG. 9F, a second upper interlayer insulating layer UILD2may be formed on the semiconductor substrate 2 including the cellvertical structures CV. The second upper interlayer insulating layerUILD2 may be formed of silicon oxide.

Trenches 34 passing through the first and second upper interlayerinsulating layers UILD1 and UILD2 and the molding structure (referencenumeral MS of FIG. 9E) and crossing the molding structure (referencenumeral MS of FIG. 9E) may be formed on the cell semiconductor pattern14 c.

In an exemplary embodiment of the inventive concept, the trenches 34 maybe formed in a line shape elongated in a first direction X.

Empty spaces may, be formed by etching the second molding layer(reference numeral 22 of FIG. 9E) exposed by the trenches 34. A secondcell dielectric layer (reference numeral 37 of FIG. 1B) and cell gateconductive patterns 38, filling the empty spaces, may be sequentiallyformed. The information of the second cell dielectric layer (referencenumeral 37 of FIG. 1B) and the cell gate conductive patterns 38 mayinclude conformally forming a second dielectric material on thesemiconductor substrate 2 including the empty spaces, forming aconductive material layer, and removing the conductive material layerformed on the second upper interlayer insulating layer UILD2 and in thetrenches 34 by using an etching process.

In an exemplary embodiment of the inventive concept, the first andsecond molding layers 20 and 22 in a staircase area of the moldingstructure (reference numeral MS of FIG. 9E) disposed in the seconddirection Y intersecting the line-shaped trenches 34 may remain to formfirst and second molding patterns 20 a and 22 a. Accordingly, the cellgate conductive patterns 38 may be formed in the staircase area disposedin the first direction X, and the first and second molding patterns 20 aand 22 a may be formed in the staircase area disposed in the seconddirection Y perpendicular to the first direction X.

The first molding layer 20 remaining between the cell gate conductivepatterns 38 may be a cell interlayer insulating layer (reference numeral20 a of FIG. 18).

insulating spacers 40 may be formed on sidewalls of the trenches 34. Theinsulating spacers 40 may be formed of an insulating material, such assilicon oxide or silicon nitride.

A cell source impurity region 42 may be formed in the cell semiconductorpattern 14 c exposed by the trenches 34 by performing anion-implantation process. The cell source impurity region 42 may have adifferent conductivity type than the low concentration impurity regionLIR. For example, the low concentration impurity region LIR may have ap-type conductivity, and the cell source impurity region 42 may have ann-type conductivity.

Cell source patterns 46 may be formed in the trenches 34. The cellsource patterns 46 may be formed of a conductive material (e.g., Ti,TiN, or W).

Referring to FIG. 9G, a third upper interlayer insulating layer D3 innbe formed on the semiconductor substrate 2 including the cell sourcepatterns 46. The third upper interlayer insulating layer UILD3 may beformed of silicon oxide.

A first peripheral lower contact plug 52 a, a second peripheral lowercontact plug 52 b, a ground lower contact plug 54, cell gate lowercontact plugs 56, a body contact plug 51, and peripheral lower contactdummy plugs 58 may be formed on the semiconductor substrate 2.

The cell gate lower contact plugs 56 may be formed on the staircase areaof the cell gate conductive patterns 38. The cell gate lower contactplugs 56 may pass through the first to third upper interlayer insulatinglayers UILD1 to UILD3 and may be elecrically connected to the cell gateconductive patterns 38.

The first peripheral lower contact plug 52 a, the second peripherallower contact plug 52 b, the ground lower contact plug 54, and theperipheral lower contact dummy plugs 58 may be formed at outer sides ofthe cell semiconductor pattern 14 c. in other words, the contact plugs52 a, 52 b, 54 and 58 may not overlap the cell semiconductor pattern 14c.

The first peripheral lower contact plug 52 a may pass through the firstto third upper interlayer insulating layers UILD1 to UILD3, the buggerinsulating layer 12, and the third and fourth lower interlayerinsulating layers LILD3 and LILD4 and may be electrically connected tothe first peripheral upper interconnection structure PWa.

The second peripheral lower contact plug 52 b may pass through the firstto third upper interlayer insulating layers UILD1 to UILD3, the bufferinsulating layer 12, and the third and fourth lower interlayerinsulating layers LILD3 and LILD4 and may be electrically connected tothe second peripheral upper interconnection structure PWb.

The ground lower contact plug 54 may pass through the first to thirdupper interlayer insulating layers UILD1 to UILD3, the buffer insulatinglayer 12, and the fourth lower interlayer insulating layer LILD4 and maybe electrically connected to a contact area of the conductive shieldingpattern 10 a.

The body contact plug 31 may pass through the first to third upperinterlayer insulating layers UILD1 to UILD3 and may be connected to thecell semiconductor pattern 14 c.

In an exemplary embodiment of the inventive concept, the body contactplug 51 may pass through the first to third upper interlayer insulatinglayers UILD1 to UILD3 and a plurality of the first and second insulatingpatterns 20 a and 22 a and may be connected to the cell semiconductorpatter 114 c.

The peripheral lower contact dummy plugs 58 may pass through the firstto third upper interlayer, insulating layers UILD1 to UILD3. Theperipheral lower contact dummy plugs 58 may pass through the first tothird upper interlayer insulating layers UILD1 to UILD3 and may bedisposed on the semiconductor dummy patterns 14 d. The peripheral lowercontact dummy plugs 58 may pass through the first to third upperinterlayer insulating layers UILD1 to UILD3 to be connected to thesemiconductor dummy patterns 14 d.

In an exemplary embodiment of the inventive concept, the formation ofthe plugs 52 a, 52 b, 54, 56, and 58 may include forming holes in whichto form the plugs 52 a, 52 b, 54, 56, and 58, implanting ions in areasexposed by the holes, and filling the boles with a conductive materialDue to the ion implantation, a cell body contact impurity region 50 maybe formed in the cell semiconductor pattern 14 c below the body contactplug 51. The cell body contact impurity region 50 may have the sameconductivity type as the low concentration impurity region LIR and alower impurity concentration than the low concentration impurity regionLIR,

A fourth upper interlayer insulating layers UILD4 may be formed on thethird upper interlayer insulating layer UILD3. The fourth upperinterlayer insulating layer UILD4 may be formed of silicon oxide.

Cell bit line contact plugs 60, a first peripheral upper contact plug 62a, a second peripheral upper contact plug 62 b, a ground upper contactplug 64, cell gate upper contact plugs 66, and peripheral upper contactdummy plugs 68 may be formed.

The cell bit line contact plugs 60 may pass through the second to fourthupper interlayer insulating layers UILD2 to UILD4 and may beelectrically connected to the cell pad patterns 30 (or, cell contactpads) of the cell vertical structures CV. The first peripheral uppercontact plug 62 a may pass through the fourth upper interlayerinsulating layer UILD4 and may be electrically connected to the firstperipheral lower contact plug 52 a. The first peripheral lower contactplug 52 a the first peripheral upper contact plug 62 a may configure afirst peripheral contact structure 72 a. The second peripheral uppercontact plug 621 may pass through the fourth upper interlayer insulatinglayer UILD4 and may be electrically connected to the second peripherallower contact plug 52 b. The second peripheral lower contact plug 52 band the second peripheral upper contact plug 6 b may configure a secondperipheral contact structure 72 b. The ground upper contact plug 64 maypass through the fourth upper interlayer insulating layer UILD4 and maybe electrically connected to the ground lower contact plug 54. Theground lower contact plug 54 and the ground upper contact plug 64 mayconfigure a ground contact structure 74. The cell gate upper contactplugs 66 may pass through the, fourth upper interlayer insulating layerUILD4 and may be electrically connected to the cell gate lower contactplugs 56. The cell gate lower contact plugs 56 and the cell gate uppercontact plugs 66 may configure a cell gate contact structure 76. Theperipheral upper contact dummy plugs 68 may pass through the fourthupper interlayer insulating layer UILD4 and may be electricallyconnected to the peripheral lower contact dummy plugs 58. The peripherallower contact dummy plugs 58 and the peripheral upper contact dummyplugs 68 may configure a peripheral dummy contact structure 78.

A hit line 82 a, a second peripheral interconnection 82 b, a groundinterconnection 84, a cell gate interconnection 86, and a peripheralinterconnection dummy structure 88 may be formed on the fourth upperinterlayer insulating layer UILD4.

The bit line 82 a may be electrically connected to the cell bit linecontact plugs 60 and the first peripheral contact structure 72 a.Accordingly, the bit line 82 a may electrically connect the cell padpattern 30 of the cell vertical structure CV to the first peripheralcircuit PTR1. The second peripheral interconnection 82 b may beelectrically connected to the second peripheral contact structure 72 b.The ground interconnection 84 may be electrically connected to theground contact structure 74. The cell gate interconnection 86 may beelectrically connected to the cell gate contact structure 76. Theperipheral interconnection dummy structure 88 may be connected to theperipheral dummy contact structure 78. The peripheral interconnectiondummy structure 88 and the peripheral dummy contact structure 78 mayconfigure an upper outer dummy structure UDS.

Referring again to FIG. 1A, a fifth upper interlayer insulating layerUILD5 may be formed on the fourth upper interlayer insulating layerUILD4.

A first contact plug 90 a electrically connected to the cell gateinterconnection 86, and a second contact plug 90 b electricallyconnected to the second peripheral interconnection 82 b, passing throughthe fifth upper interlayer insulating layer UILD5, may be formed on thesemiconductor substrate 2.

A word line interconnection structure 92 electrically connected to thefirst and second contact plugs 90 a and 90 b may be formed on the fifthupper inter layer insulating layer UILD5. Accordingly, the word lineinterconnection structure 92 may electrically connect the cell gateconductive pattern 38, in other words, a word line to the secondperipheral circuit PTR2.

FIG. 10 is a schematic view of a semiconductor module 200 in accordancewith an exemplary embodiment of the inventive concept.

Referring to FIG. 10, the semiconductor module 200 may include a memorydevice 230 formed on a module substrate 210. The semiconductor module200 may include a semiconductor device 220 mounted on the modulesubstrate 210.

The memory device 230 may include a semiconductor device in accordancewith an exemplary embodiment of the inventive concept. Input/outputterminals 240 may be arranged on at least one side of the modulesubstrate 210.

FIG. 11 is a block diagram illustrating an electronic system 300 inaccordance with an exemplary embodiment of the inventive concept.

Referring to FIG. 11, the electronic system 300 including asemiconductor device in accordance with an exemplary embodiment of theinventive concept may be provided.

The electronic system 300 may include a body 310. The body 310 mayinclude a microprocessor unit 320, a power supply 330, a function unit340, and/or a display controller unit 350. The body 310 may be a systemboard or a motherboard including a printed circuit board (PCB).

The microprocessor unit 320, the power supply 330, the function unit340, and the display controller unit 350 may be installed or mounted onthe body 310. A display unit 360 may be disposed on an upper surface oran outside of the body 310. For example, the display unit 360 may bedisposed on a surface of the body 310 and display an image processed bythe display controller unit 350. The power supply 330 may receive aconstant voltage from an external power source, etc., divide the voltageinto various levels of voltages, and supply those voltages to themicroprocessor unit 320, the function unit 340, and the displaycontroller unit 350, etc. The microprocessor unit 320 may receive avoltage from the power supply 330 to control the function unit 340 andthe display unit 360. The function unit 340 may perform variousfunctions of the electronic system 300.

The function unit 340 may perform various functions of the electronicsystem 300. For example, when the electronic system 300 is a mobileelectronic apparatus, such as a mobile phone, the function unit 340 mayhave several components which perform wireless communication functionssuch as output of an image to the display unit 360 or output of a voiceto a speaker, by dialing or communication with an external apparatus370. When a camera is installed, the function unit 340 may function as acamera image processor.

In an exemplary embodiment of the inventive concept, when the electronicsystem 300 is connected to a memory card, etc., to expand a capacitythereof, the function unit 340 may be a memory card controller. Thefunction unit 340 may exchange signals with the external apparatus 370through a wired or wireless communication unit 380.

Further, when the electronic system 300 uses a Universal Serial Bus(USB) etc., to expand functionality, the function unit 340 may serve asan interface controller.

FIG. 12 is a block diagram illustrating an electronic system 400 inaccordance with an exemplary embodiment of the inventive concept.

Referring to FIG. 12, the electronic system 400 may include asemiconductor device in accordance with art exemplary embodiment of theinventive concept. The electronic system 400 may include a memory system412, a microprocessor 414, a random access memory (RAM) 416, and a userinterface 418 performing data communication using a bus 420. Themicroprocessor 414 may program and control the electronic system 400.The RAM 416 may be used as an operational memory of the microprocessor414. The microprocessor 414, the RAM 416, and/or other components may beassembled in a single package, The memory system 412 may include asemiconductor device in, accordance with an exemplary embodiment of theinventive concept.

The user interface 418 may be used to input data to or output data fromthe electronic system 400. The memory system 412 may store codes foroperating the microprocessor 414, data processed by the microprocessor414, or external input data. The memory system 412 may include acontroller and a memory device.

According to exemplary embodiments of the inventive concept, asemiconductor device structure and a method of manufacturing thesemiconductor device structure capable of increasing productivity may beprovided.

According to exemplary embodiments of the inventive concept, asemiconductor device structure and method of manufacturing thesemiconductor device structure capable of preventing crosstalk betweenperipheral circuits and cell array regions, vertically disposed, may beprovided.

According to exemplary embodiments of the inventive concept, a cellsemiconductor pattern may be disposed on a semiconductor substrate, andperipheral circuits and peripheral interconnection structures may bedisposed between the semiconductor substrate and the cell semiconductorpattern.

An inner dummy structure may be disposed between the semiconductorsubstrate and the cell semiconductor pattern. Such an inner dummystructure may allow a lower interlayer insulating layer covering thesemiconductor substrate as and the cell semiconductor pattern andconfigured with a plurality of layers to be planar. Accordingly, asemiconductor pattern disposed on the planar lower interlayer insulatinglayer having the planar upper surface may also have a planar uppersurface. Since the upper surface of the semiconductor pattern is planar,a cell array region including a three-dimensional arrangement on thesemiconductor pattern may be stably formed without process failure.

A conductive shielding pattern may be formed between the peripheralcircuits and peripheral interconnection structures, and the cellsemiconductor pattern on the semiconductor substrate, The conductiveshielding pattern may prevent crosstalk between cell array regionsdisposed on the cell semiconductor pattern and peripheral circuitsdisposed under the cell semiconductor pattern.

An outer dummy structure and a semiconductor dummy pattern disposed onthe semiconductor substrate away from the cell semiconductor pattern mayprevent the dishing phenomenon from occurring due to a planarizationprocess. Accordingly, since a layer has a more planar upper surface,upper patterns formed on the planar upper surface may be stably formedwith no defects, and thus productivity may be increased.

While the inventive concept has been described with reference toexemplary embodiments thereof, it will be understood by those skilled inthe art that various changes in form and detail may be made theretowithout departing from the scope of the inventive concept as defined bythe appended claims. For example, exemplary embodiments of the inventiveconcept may be applied to a finFET, a nanowire transistor, or athree-dimensional transistor.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor substrate; a first pattern on the semiconductor substrate;a second pattern disposed at substantially the same level as the firstpattern and spaced apart from the second pattern; a peripheral circuiton the semiconductor substrate, at least a portion of the peripheralcircuit being between the semiconductor substrate and the first pattern;a dummy interconnection structure on the semiconductor substrate; astacked structure including cell gate conductive patterns on the firstpattern, the cell gate conductive patterns being stacked while beingspaced apart from each other in a vertical direction perpendicular to anupper surface of the first pattern; a cell vertical structure disposedon the first pattern and passing through the cell gate conductivepatterns, wherein at least one side of the stacked structure has astaircase shape; and a dummy contact plug directly on and contacting thesecond pattern, wherein a portion of the cell vertical structuredirectly contacts the first pattern, wherein an upper end of the dummycontact plug is at a higher level than an uppermost cell gate conductivepattern among the cell gate conductive patterns, wherein a lower end ofthe dummy contact plug is at a lower level than a lowermost cell gateconductive pattern among the cell gate conductive patterns. wherein thedummy interconnection structure is electrically isolated, wherein thedummy interconnection structure includes dummy patterns disposed atdifferent levels from each other with respect to an upper surface of thesemiconductor substrate, wherein the d umm y patterns include: a firstdummy pattern; and a second dummy pattern disposed at a higher levelthan the first dummy pattern, wherein the peripheral circuit includes: afirst peripheral interconnection pattern disposed at substantially thesame level as the first dummy pattern; and a second peripheralinterconnection pattern disposed at substantially the same level as thesecond dummy pattern..
 2. The semiconductor device of claim 1, whereinthe first pattern and the second pattern include the same material. 3.The semiconductor device of claim 2, wherein the first pattern includesa first layer and a second layer on the first layer, and wherein thesecond layer is different from the first layer.
 4. The semiconductordevice of claim 1, wherein each of the first pane and the second patternincludes polysilicon.
 5. The semiconductor device of claim 1, whereinthe first pattern and the second pattern have substantially the samethickness.
 6. The semiconductor device of claim 1, wherein the dummypatterns further include a dummy gate pattern, wherein the peripheralcircuit further includes a peripheral, gate disposed at substantiallythe same level as the dummy gate pattern, and wherein the dummy gatepattern is at a lower level than the first dummy pattern.
 7. Thesemiconductor device of claim 6, wherein the dummy patterns furtherinclude a third dummy pattern disposed at a higher level than the seconddummy pattern.
 8. The semiconductor device of claim 7, wherein at leasta portion of the third dummy pattern overlaps at least one of at least aportion of the first dummy pattern or at least a portion of the seconddummy pattern in the vertical direction.
 9. The semiconductor device ofclaim 1, wherein at least a portion of the second dummy pattern overlapsat least a portion of the first dummy pattern in the vertical direction.10. The semiconductor device of claim 1, wherein the dummy contact plugis a single dummy contact plug electrically connected to the the secondpattern.
 11. The semiconductor device of claim 1, wherein the cellvertical structure includes a channel layer, a first dielectric layer, asecond dielectric layer and a data storage layer, wherein the cell gateconductive patterns include word lines, wherein the data storage layeris between the first dielectric layer and the second dielectric layer,wherein the second dielectric layer is between the channel layer and thedata storage layer, and wherein the channel layer contacts the firstpattern.
 12. A semiconductor device, comprising: a semiconductorsubstrate; a first pattern on the semiconductor substrate; a secondpattern disposed at substantially the same level as the first patternand spaced apart from the first pattern; peripheral circuit on thesemiconductor substrate, at least a portion of the peripheral circuitbeing between the semiconductor substrate and the first pattern; a dummyinterconnection structure on the semiconductor substrate; a stackedstructure including cell gate conductive patterns on the first pattern,the cell gate conductive patterns being stacked while being spaced apartfrom web other in vertical direction perpendicular to an upper surfaceof the first pattern; a cell vertical structure disposed on the firstpattern, passing through the cell gate conductive patterns, and directlycontacting the first pattern; and a dummy contact plug directlycontacting the second pattern, wherein an upper end of the dummy contactplug is at a higher level than an uppermost cell gate conductive patternamong the cell Mate conductive patterns, wherein a lower end of thedummy contact plug is at a lower level than a lowermost cell gateconductive pattern among the cell gate conductive patterns, wherein atleast one side of the stacked structure has a staircase shape, whereinthe dummy interconnection structure is electrically isolated, whereinthe dummy interconnection structure includes at least three dummypatterns disposed at different levels from each other with respect to anupper surface of the semiconductor substrate, wherein the at least threedummy patterns include: a dummy gate pattern; a first dummy patterndisposed at a higher level than the dummy gate pattern; and a seconddummy pattern disposed at a higher level than the first dummy pattern,and wherein the peripheral circuit includes: a peripheral gate disposedat substantially the same level as the dummy gate pattern; a firstperipheral interconnection pattern disposed at substantially the samelevel as the first dummy pattern; and a second peripheralinterconnection pattern disposed at substantially the same level as thesecond dummy pattern.
 13. The semiconductor device of claim 12, whereinthe first pattern and the second pattern include the same material andhave substantially the same thickness.
 14. The semiconductor device ofclaim 13, wherein the first pattern includes a first layer and a secondlayer on the first layer, and wherein the second layer is different fromthe first layer.
 15. The semiconductor device of claim 12, wherein eachof the first pattern and the second pattern includes polysilicon. 16.The semiconductor device of claim 12, wherein at least a portion of thesecond dummy pattern overlaps at least one of at least a portion of thedummy gate pattern or at least a portion of the first dummy pattern inthe vertical direction.
 17. The semiconductor device of claim 12,further comprising: a bit line; and a bit line dummy contact plugbetween the bit line and the cell vertical structure, wherein the cellvertical structure includes a channel layer, a first dielectric layer, asecond dielectric layer and a data storage layer, wherein the cell gateconductive patterns include word lines, wherein the data storage layeris between the first dielectric layer and the second dielectric layer,wherein the second dielectric layer is between the channel layer and thedata storage layer, and wherein the channel layer contacts the firstpattern.
 18. An electronic system, comprising: a memory device; and aprocessor to control the memory device, wherein the memory devicecomprises: a semiconductor substrate; a first pattern on thesemiconductor substrate; a second pattern disposed at substantially thesame level as the first pattern and spaced apart from the secondpattern; a peripheral circuit on the semiconductor substrate, at least aportion of the peripheral circuit being between the semiconductorsubstrate and the first pattern; a dummy interconnection structure onthe semiconductor substrate; a stacked structure including cell gateconductive patterns on the first pattern, the cell gate conductivepatterns being stacked while being spaced apart from each other in avertical direction perpendicular to an upper surface of the firstpattern; a cell vertical structure disposed on the first pattern,passing through the cell gate conductive patterns, and directlycontacting the first pattern; and a dummy contact plug directlycontacting the second pattern, wherein an upper end of the dummy contactplug is at a higher level than an uppermost cell gate conductive patternamong the cell gate conductive patterns, wherein a lower end of thedummy contact plug, is at a lower level than a lowermost cell gateconductive pattern among the cell gate conductive patterns, wherein atleast one side of the stacked structure has a staircase shape, whereinthe dummy interconnection structure is electrically isolated, whereinthe dummy interconnection structure includes at least three dummypatterns disposed at different levels from each other with respect to anupper surface of the semiconductor substrate, wherein the at least threedummy patterns include: a dummy gate pattern; a first dummy patterndisposed at a higher level than the dummy gate pattern; and a seconddummy pattern disposed at a higher level than the first dummy pattern,and wherein the peripheral circuit includes: a peripheral gate disposedat substantially the same level as the dummy gate pattern; a firstperipheral interconnection pattern disposed at substantially the samelevel as the first dummy pattern; and a second peripheralinterconnection pattern disposed at substantially the same level as thesecond dummy pattern.
 19. The electronic system of claim 18, wherein thecell vertical structure includes a channel layer, a first dielectriclayer, a second dielectric layer and a data storage layer, wherein thecell gate conductive patterns include word lines, wherein the datastorage layer is between the first dielectric layer and the seconddielectric layer, wherein the second dialectric layer is between thechannel layer and the data storage layer, and wherein the channel layercontacts the first pattern,
 20. The electronic system of claim 18,wherein at least a portion of the second dummy pattern overlaps at leastone of at least a portion of the dummy gate pattern or at least aportion of the first dummy pattern in the vertical direction.